G60T60AK3HD IGBT L6599 Refer to the TLP2160 datasheet

Refer to the TLP2160 datasheet for input current

4V) — connect to 3-pin JST-XH balance port

ultra-fast 100ns propagation delay

Trench gate field stop structure — reduced conduction loss and improved switching speed vs

solar charge controllers

G60T60AK3HD IGBT L6599 Refer to the TLP2160 datasheetType: IGBT + Anti Parallel Diode Type of IGBT Channel: N Pc Maximum Power Dissipation: 483 W Vce Maximum Collector Emitter Voltage: 600 V Vge Maximum Gate Emitter Voltage: 20 V Ic Maximum Collector Current: 120 A @25 VCEsat Collector Emitter saturation Voltage, typ: 1. 85 V @25 VGEth Maximum G E Threshold Voltag: 7 V Tj Maximum Junction Temperature: 150 tr Rise Time, typ: 124 nS Coes Output Capacitance, typ: 224 pF Qg Total Gate Charge, typ: 117 nC